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 TD350
Advanced IGBT/MOSFET Driver
s s s s s s s s s s 0.75A source/1.2A sink min gate drive Active Miller clamp feature Two steps turn-off with adjustable level and delay Desaturation detection Fault status output Negative gate drive ability Input compatible with pulse transformer or optocoupler Separate sink and source outputs for easy gate drive UVLO protection 2kV ESD protection
Applications
s s s 1200V 3-Phase Inverter Motor Control UPS Systems
D SO-14 (Plastic MicroPackage)
Description
TD350 is an advanced gate driver for IGBT and power MOSFET. Control and protection functions are included and allow the design of high reliability systems. Innovative active Miller clamp function avoids the need of negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver TD350 includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit condition. Same delay is applied at turn-on to prevent pulse width distortion. TD350 also includes an IGBT desaturation protection and a FAULT status output. TD350 is compatible with both pulse transformer and optocoupler signals.
Pin Connections (top view)
IN VREF FAULT NC COFF NC LVOFF
1 2 3 4 5 6 7
14 13 12
DESAT VH OUTH OUTL VL CLAMP GND
TD350
11 10 9 8
Order Codes
Part Number TD350ID TD350IDT Temperature Range -40, +125C Package SO Packaging Tube Tape & Reel
August 2004
Revision 1
1/11
TD350 1 Block Diagram
Block Diagram
Figure 1: Schematic block diagram
Vref
IN
Pulse Transformer
VH Vref
UVLO Desat Vref Block
DESAT 16V VH
Optionnal
VREF FAULT NC COFF NC LVOFF
OUTH OUTL VL CLAMP GND -10V
Vref
VH
Off Level
TD350
Table 1: Pin description Name
IN VREF FAULT NC COFF NC LVOFF GND CLAMP VL OUTL OUTH VH DESAT
Pin Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Control
Off delay
Type
Analog input Analog output Digital output Not connected Timing capacitor Not connected Analog input Power supply Analog output Power supply Analog output Analog output Power supply Analog input
Function
Input +5V reference voltage Fault status output Turn off delay Turn off level Signal ground Miller clamp Negative supply Gate drive output (sink) Gate drive output (source) Positive supply Desaturation protection
2/11
Absolute Maximum Ratings 2 Absolute Maximum Ratings
TD350
Table 2: Key parameters and their absolute maximum ratings Symbol
VHL VH VL Vout Vdes Vter Pd Tstg Tj Rhja Rhjc ESD
Parameter
Maximum Supply Voltage (VH - VL) Maximum VH voltage vs. GND Minimum VL voltage vs. GND Voltage on OUTH, OUTL, CLAMP pins Voltage on DESAT, FAULT, LVOFF pin Voltage on other pins (IN, COFF, VREF) Power dissipation Storage temperature Maximum Junction Temperature Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Electrostatic discharge
Value
28 28 -12 VL-0.3 to VH+0.3 -0.3 to VH+0.3 -0.3 to 7 500 -55 to 150 150 125 22 2
Unit
V V V V V V mW C C C/W C/W kV
Table 3: Operating conditions Symbol
VH VL VH-VL Toper
Parameter
Positive Supply Voltage vs. GND Negative Supply Voltage vs. GND Maximum Total Supply Voltage Operating Free Air Temperature Range
Value
UVLO to 26 0 to -10 26 -40 to 125
Unit
V V V C
3/11
TD350 3 Electrical Characteristics
Electrical Characteristics
Table 4: Tamb = -20 to 125C, VH=16V, VL=-10V (unless otherwise specified) Symbol
Input Vton Vtoff tonmin Iinp
Parameter
IN turn-on threshold voltage IN turn-off threshold voltage Minimum pulse width IN Input current
Test Condition
Min
0.8 100
Typ
1.0 4.0 135
Max
Unit
V V ns A V V mA V A ns V V V V V
4.2 220 1 5.15 5.22
Voltage reference - note 1 Vref Voltage reference T=25C TminIref Maximum output current Desaturation protection Vdes Desaturation threshold Ides Source current Fault output tfault Delay for fault detection VFL FAULT low voltage Clamp Vtclamp CLAMP pin voltage threshold VCL Off Delay Vtdel Rdel Off Levels Iblvoff Violv Outputs VOL1
7.2 250
7.9
Ifsink=10mA 2.0
500 1
T=25C Clamp low voltage at Icsink=500mA TminVL+2.5 VL+3.0 2.65 500 200 0 VL+0.35 VL+1.0 VL+1.5 VL+2.5 VL+3.0 VH-2.5 VH-3.0 VH-4.0 130 175 75 90 270 10 10 9 0.5 60 11 10 1 800 110 12 11
-0.3
A V
V V V V V V V V ns ns ns ns ns ns V V V mA
T=25C VOL2 Output low voltage at Iosink=200mA Tmin1) Recommended capacitor range on VREF pin is 10nF to 100nF.
5
4/11
Functional Description 4 Functional Description 4.5 Two level turn-off
TD350
4.1 Input
The input is compatible with optocouplers or pulse transformers. The input is triggered by the signal edge and allows the use of low-sized, low-cost pulse transformer. Input is active low (output is high when input is low) to ease the use of optocoupler. When driven by a pulse transformer, the input pulse (positive and negative) width must be larger than the minimum pule width tonmin.
The two-level turn-off is used to increase the reliability of the application. During turn-off, gate voltage can be reduced to a programmable level in order to reduce the IGBT current (in the event of over-current). This action avoids both dangerous overvoltage across the IGBT, and RBSOA problems, especially at short circuit turn-off. Turn-off (Ta) delay is programmable through an external resistor and capacitor for accurate timing. Turn-off delay (Ta) is also used to delay the input signal to prevent distortion of input pulse width.
4.2 Voltage reference
A voltage reference is used to create accurate timing for the two-level turn-off with external resistor and capacitor.
4.3 Desaturation protection
Desaturation protection ensures the protection of the IGBT in the event of overcurrent. When the DESAT voltage goes higher that 7V, the output is driven low (with 2-level turn-off if applicable). The FAULT output is activated. The FAULT state is exited at the next falling edge of IN input. A programmable blanking time is used to allow enough time for IGBT saturation. Blanking time is provided by an internal current source and external capacitor. DESAT input can also be used with an external comparator for overcurrent or over temperature detection.
4.6 Minimum ON time
In order to ensure the proper operation of the 2level turn-off function, the input ON time (Twin) must be greater than the Twinmin value: Twinmin=Ta+2*Rdel*Coff Rdel is the internal discharge resistor and Coff is the external timing capacitor. Input signals smaller than Ta are ignored. Input signals larger than Twinmin are transmitted to the output stage after the Ta delay with minimum width distortion (Tw=Twout-Twin). For an input signal width Twin between Ta and Twinmin, the output width Twout is reduced below Twin (pulse distortion) and the IGBT could be partially turned on. These input signals should be avoided during normal operation.
4.4 Active Miller clamp
A Miller clamp allows the control of the Miller current during a high dV/dt situation and can avoid the use of a negative supply voltage. During turn-off, the gate voltage is monitored and the clamp output is activated when gate voltage goes below 2V (relative to GND). The clamp voltage is VL+3V max for a Miller current up to 500mA. The clamp is disabled when the IN input is triggered again.
4.7 Output
The output stage is able to sink 2.3A and source 1.5A typical at 25C (1.2A/0.75A minimum over the full temperature range). Separated sink and source outputs allow independent gate charge and discharge control without an extra external diode.
5/11
TD350 4.8 Fault status output
Fault output is used to signal a fault event (desaturation, UVLO) to a controller. The fault pin is designed to drive an optocoupler.
Functional Description
for VH<2V). Fault output signals the undervoltage state and is reset only when undervoltage state disappears.
UVH VH UVL Vccmin
4.9 Undervoltage protection
Undervoltage detection protects the application in the event of a low VH supply voltage (during startup or a fault situation). During undervoltage, the OUTH pin is open and the OUTL pin is driven low (active pull-down for VH>2V, passive pull-down Figure 2: Detailed Internal Schematic
2V OUT
FAULT
UVLO
Comp_Input
IN
Delay Vref
1V-4V VH
VREF
250uA
Comp_Desat
DESAT
7.2V
Control Block
Vref
FAULT
Comp_DelayOff
COFF
2.5V
Comp_Clamp
S2
2V
CLAMP
VH
OUTH
VH
OUTL LVOFF
2-level OFF driver
VL
GND
rev. 3
6/11
Timing Diagrams 5 Timing Diagrams
TD350
Figure 3: Turn-on and turn-off
Twin IN
COFF Ta VH level LVOFF OUT Ta
Twout Open
VL level
CLAMP VH level Miller plateau Vge VL level Clamp threshold
Vce
Figure 4: Minimum ON time
TinTwinmin
2.5V COFF Ta VH level LVOFF OUT VL level Open CLAMP Ta Ta
Figure 5: Desaturation fault
IN
2.5V COFF Ta Ta Ta VH level LVOFF OUT VL level 7V DESAT Desat Blanking Time FAULT open
7/11
TD350 6 Typical Performance Curves
Typical Performance Curves
Figure 6: Supply current vs temperature
Figure 9: Voltage reference vs temperature
5.20
5.0 4.0 In (mA)
Vref (V)
5.10
3.0 2.0 1.0 0.0 -50 -25 0 25 50 75 100 125 Temp (C)
5.00
4.90
4.80 -50 -25 0 25 50 75 100 125 Temp (C)
Figure 7: Low level output voltage vs temp.
3.0
Figure 10: High level output voltage vs temp.
4.0
3.0 VH-VOH (V)
VOL-VL (V) 2.0
Iosource=500mA
2.0
Iosink=500mA
1.0
Iosource=200mA
Iosink=200mA Iosink=20mA
0.0 -50 -25 0 25 50 75 100 125 Temp (C)
1.0
Iosource=20mA
0.0 -50 -25 0 25 50 75 100 125 Temp (C)
Figure 8: Desaturation threshold vs temperature
10 9
Figure 11: Desaturation source current vs temp.
500 400 Ides (uA) 300 200 100 0
Vdes (V)
8 7 6 5 -50 -25 0 25 50 Temp (C) 75 100 125
-50
-25
0
25
50
75
100
125
Temp (C)
8/11
Application Diagrams 7 Application Diagrams
TD350
Figure 12: Single supply IGBT drive with active Miller clamp and 2-level turn-off
VH UVLO Desat Vref Block
IN
5.1V
DESAT 16V VH OUTH OUTL VL CLAMP GND
Vref
VREF FAULT NC COFF NC LVOFF
Vref
VH
Off Level
TD350
Figure 13: Large IGBT drive with negative gate drive and desaturation detection
Vref IN
Pulse Transformer
Control
Off delay
UVLO Desat Vref Block
DESAT 16V VH OUTH OUTL VL CLAMP GND -10V
VH
Vref
VREF FAULT NC
Vref
NC VH LVOFF Off Level
TD350
Figure 14: Use of DESAT input for direct overcurrent detection
Vref Vref IN
Pulse Transformer
UVLO Desat Vref Block
Control
COFF
Off delay
DESAT 16V VH OUTH OUTL VL CLAMP GND
VH
Vref
VREF FAULT NC COFF NC LVOFF
Vref
VH
Off Level
TD350
Control
Off delay
9/11
TD350 8
PACKAGE MECHANICAL DATA
SO-14 MECHANICAL DATA
DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.0 5.3 1.27 0.68 8 (max.) 0.149 0.181 0.019 8.75 6.2 0.35 0.19 0.5 45 (typ.) 0.336 0.228 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.003 MIN.
PACKAGE MECHANICAL DATA
inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 0.019
0.344 0.244 0.050 0.300 0.157 0.208 0.050 0.026
PO13G
10/11
Revision History 9 Revision History
Date 01 August 2004 Revision 1 First Release Description of Changes
TD350
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved
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11/11


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